J112 [Linear Systems]
SINGLE N-CHANNEL JFET; 单N沟道JFET
| 型号： | J112 |
| 厂家： | 
Linear Systems |
| 描述： | SINGLE N-CHANNEL JFET |
| 文件： | 总2页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J/SST111 SERIES
SINGLE N-CHANNEL JFET
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
FAST SWITCHING
5pA
4ns
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
1
D
3
D
1
S
2
G
3
G
-55 to 150°C
-55 to 135°C
2
S
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J)
Continuous Power Dissipation (SST)
Maximum Currents
360mW
350mW
Gate Current
50mA
Maximum Voltages
Gate to Drain
Gate to Source
-35V
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
IG = -1µA, VDS = 0V
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
VGS(off) Gate to Source Cutoff Voltage
-35
-3
-35
-1
-35
2
V
-10
-1
-5
-1
-3
-1
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 15V, ID = 10mA
VDS = 5V, VGS = -10V
IG = 1mA, VDS = 0V
VGS(F)
IDSS
IGSS
IG
ID(off)
rDS(on)
Gate to Source Forward Voltage
Drain to Source Saturation Current2
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
0.7
20
5
mA
nA
pA
nA
Ω
-0.005
-5
0.005
1
30
1
50
1
100
Drain to Source On Resistance
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
gfs
gos
Forward Transconductance
Output Conductance
6
25
mS
µS
V
DS = 20V, ID = 1mA
f = 1kHz
VGS = 0V, ID = 0mA
rds(on)
Drain to Source On Resistance
30
50
100
Ω
f = 1kHz
Ciss
Crss
Input Capacitance
Reverse Transfer Capacitance
7
3
12
5
12
5
12
5
VDS = 0V, VGS = -10V
pF
f = 1MHz
VDG = 10V, ID = 1mA
nV/√Hz
en
Equivalent Noise Voltage
3
f = 1 kHz
SWITCHING CHARACTERISTICS
SYM. CHARACTERISTIC TYP UNIT CONDITIONS
SWITCHING CIRCUIT CHARACTERISTICS
SYM.
VGS(L)
RL
J/SST111 J/SST112 J/SST113
td(on)
tr
td(off)
tf
2
2
6
-12V
800Ω
12mA
-7V
1600Ω
6mA
-5V
3200Ω
3mA
Turn On Time
Turn Off Time
VDD = 10V
VGS(H) = 0V
ns
ID(on)
15
SWITCHING TEST CIRCUIT
TO-92
SOT-23
VDD
0.175
0.195
0.130
0.155
0.89
1.03
0.045
0.060
0.37
0.51
1
3
2
RL
VGS(H)
VGS(L)
LS XXX
YYWW
0.170
0.195
1.78
2.05
2.80
3.04
OUT
1k
Ω
Ω
51Ω
1.20
1.40
2.10
2.64
0.014
0.020
0.016
0.022
0.89
1.12
0.500
0.610
0.085
0.180
51
1
2
3
0.013
0.100
0.55
0.095
0.105
0.045
0.055
DIMENSIONS IN
MILLIMETERS
DIMENSIONS
IN INCHES.
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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